Microwave substrate components
I. Overview
Using semiconductor thin film vacuum evaporation, sputtering, electroplating, photolithography, laser trimming, scribing and other processes, pattern metallization on the surface of ceramic substrates (or special substrates), while integrating resistors, capacitors, inductors, etc., to produce Circuit substrates with specific functions have functions such as electrical connection, physical support, and heat dissipation, and are used in hybrid integrated circuit microwave devices.
2. Product features
High frequency, high precision, high reliability
3. technical indicators
Material: Al2O3.
Accuracy: line width/line spacing accuracy ±2.5um.
Metalization: Ti, Ni, Pt, Au, TaN resistors, prefabricated AuSn films, etc.; meet the requirements of gold wire bonding, SnPb/AuSn/AuSi/AuGe welding, and conductive adhesive bonding.
Others: Wrap around on the side, through holes (through hole resistance is less than 50 milliohms).
Film system | Typical bottom resistance | 50 -75-100 Ω/□ |
Typical thickness of transition layer | 1000 ~3000Å | |
Surface metal thickness | 3~8μm | |
Photolithography | Resolution | 0.8μm |
Alignment accuracy | ±1μm | |
Double-sided exposure, thick glue exposure | ||
Dicing | Minimum cutting size | 0.5mm×0.5mm |
Dimensional accuracy | ±50μm | |
Unit alignment accuracy | ±5μm | |
Process capability | 2"× 2 |
[1mComponentes do substrato de microondas
I. Visão geral
Usando evaporação a vácuo de filme fino semicondutor, pulverização catódica, galvanoplastia, fotolitografia, corte a laser, riscagem e outros processos, metalização de padrões na superfície de substratos cerâmicos (ou substratos especiais), enquanto integra resistores, capacitores, indutores, etc., para produzir substratos de circuito com funções específicas possuem funções como conexão elétrica, suporte físico e dissipação de calor, e são utilizados em dispositivos de micro-ondas de circuito integrado híbrido.